Muhammad Mohiuddin

Professor
PAF-Karachi Institute of Economics and Technology
Main Campus, Korangi Creek, Karachi-75190, Pakistan
Web: gsse.pafkiet.edu.pk/Mohiuddin
Email: mohiuddin@pafkiet.edu.pk
 
 
Muhammad Mohiuddin did Bachelor of Electrical Engineering from NED University, Pakistan in 1992. After working for Caterpillar Inc. in Pakistan for about a year, he proceeded to USA for graduate studies. During his MS in Electrical Engineering from University of Nebraska, Lincoln, USA, he worked on optical characterisation applying Raman spectroscopy and ellipsometry techniques on heavily-doped bulk InGaAs and GaAs/AlGaAs multiple quantum wells. After finishing his MS in 1996, he remained associated with ECE departments of various engineering institutions in Pakistan as a full-time faculty and played pivotal role in establishing ECE departments at various private and public universities in Karachi. In 2007 he started his PhD in the area of compound semiconductor devices at The University of Manchester, UK. His PhD work entailed physical and empirical device modelling and RF measurements of InP Double Heterojunction Bipolar Transistors and High Electron Mobility Transistors for high speed, low-power digital applications. He joined KIET in 2010 and actively contributed in its evolution as one of the reputed institutions of Sindh, Pakistan especially in the discipline of electronic engineering. 
Last year he joined Advanced Photovoltaics and Devices group, University of Toronto, Canada as a visiting research professor . His current area of research is flexible Si microelectronics. 
 
 
Research Publications:
  1. Raza, B., H. Parvez, and M. Mohiuddin. Exploring alternate trade-offs of placement quality versus runtime in Simulated Annealing algorithm. in Reconfigurable and Communication-Centric Systems-on-Chip (ReCoSoC), 2014 9th International Symposium on. 2014.

DOI: 10.1109/ReCoSoC.2014.6860685

 

  1. M. Mohiuddin, J. Sexton and M. Missous. Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors. Journal of Semiconductor Technology and Science (October 2013) vol. 13, no. 5.

DOI: 10.5573/JSTS.2013.13.5.516

 

  1. M. Mohiuddin, J. Sexton, and M. Missous, Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistor. International Journal of Electronics Letters, vol. 1, pp. 134-141, 2013.

DOI: 10.1080/21681724.2013.824699 

 

  1. M. Mohiuddin, J. Sexton, R. Knight, T. Tauqeer and M. Missous. Elimination of current blocking in ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors. IEEE Transactions on Electron Devices (December 2010) Vol: 57 issue: 12 pages: 3340-3347

        DOI: 10.1109/TED.2010.2074203

 

  1. M. Mohiuddin, T.Tauqeer, J.Sexton and M. Missous. Temperature studies of InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors with no Current Blocking. Semicond. Sci. Technol. 25 (2010) 075002.

 

  1. R. Knight, J. Sexton, M. Mohiuddin, T. Tauqeer and M.Missous. High frequency performance all ternary In0.52Al0.48As-In0.53Ga0.47As- In0.52Al0.48As DHBT. 34th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) held from May 17-19, 2010 in Bergstrasse, Germany.

 

  1. M. Mohiuddin, T. Tauqeer, J. Sexton and M. Missous. Low-Power LVDS driver using InP HBT ECL circuits for SKA. Wide Field Astronomy & Technology for the Square Kilometre Array—Proceedings of the conference held at the Chateau de Limelette, Belgium, 4-6 November 2009. http://www.skads-eu.org/PDF/limelette2_v1.1.pdf

 

  1. T. Tauqeer, J. Sexton, M. Mohiuddin and M. Missous. Low power, High-speed ADCs and Digital Circuits for SKA. Wide Field Astronomy & Technology for the Square Kilometre Array—Proceedings of the conference held at the Chateau de Limelette, Belgium, 4-6 November 2009. http://www.skads-eu.org/PDF/limelette2_v1.1.pdf

 

  1. T. Tauqeer, J. Sexton, M. Mohiuddin, R. Knight, F Amir and M. Missous (2009). Physical Modelling of base-dopant out diffusion in Single Heterojunction Bipolar Transistors. UK semiconductors 2009  held at University of Sheffield, Sheffield, UK on 1st and 2nd July 2009.

 

  1. M. Mohiuddin, T.Tauqeer, J.Sexton and M.Missous (2009). Very low-power LVDS driver using InP HBT ECL circuits. UK semiconductors 2009  held at University of Sheffield, Sheffield, UK on 1st and 2nd July 2009.

 

  1. J. Sexton, T. Tauqeer, M. Mohiuddin and M. Missous (2008). GHz Class Low Power Flash ADC for Broadband Communications. Advanced Semiconductor Devices and Microsystems (ASDAM), 2008. 7th International conference on 12-16 October 2008.

        DOI 10.1109/ASDAM.2008.4743326

 

  1. S. Arshad, M. Mohiuddin, A. Bouloukou and M. Missous (2008). Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs. Advanced Semiconductor Devices and Microsystems (ASDAM), 2008. 7th International conference on 12-16 October 2008.

        DOI 10.1109/ASDAM.2008.4743357

 

  1. M. Mohiuddin, S. Arshad, A. Bouloukou and M. Missous (2008). 2-D Physical Modelling of δ-doped GaAs/AlGaAs HEMT. Advanced Semiconductor Devices and Microsystems (ASDAM), 2008. 7th International conference on 12-16 October 2008.

        DOI 10.1109/ASDAM.2008.4743318

 

  1. T. Tauqeer, J. Sexton, M. Mohiuddin and M. Missous (2008). Low Power GHz Class ADC for Wide-Band Communication Systems. UK semiconductors 2008  held at University of Sheffield, Sheffield, UK on 2nd and 3rd July 2008.

 

  1. Shahzad Arshad, M. Mohiuddin, Angeliki Bouloukou, M. Missous (2008). Modelling Kink effect in InAlAs/InGaAs pHEMTs using 2D Physical Device Simulator. UK semiconductors 2008  held at University of Sheffield, Sheffield, UK on 2nd and 3rd July 2008.

 

  1. M. Mohiuddin, T. Tauqeer, J. Sexton, S. Arshad, A. Bouloukou and M. Missous (2008). 2-D Physical Modelling of δ-doped GaAs/AlGaAs HEMT. UK semiconductors 2008  held at University of Sheffield, Sheffield, UK on 2nd and 3rd July 2008.

 

  1. Shahzad Arshad, M. Mohiuddin, A. Bouloukou and M. Missous (2008). Investigations of the Kink effect in InAlAs/InGaAs pHEMTs. Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures. University of Manchester, Manchester, UK

        http://www.eee.manchester.ac.uk/research/groups/mandn/docs/abstractsv3.pdf

 

  1. M. Mohiuddin, S. Arshad, A. Bouloukou, A. Sobih and M. Missous (2008). Physical Modelling of δ-doped GaAs/AlGaAs HEMT. Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures  University of Manchester, Manchester, UK

        http://www.eee.manchester.ac.uk/research/groups/mandn/docs/abstractsv3.pdf

 

  1. Y. C. Chang, H. Yao, and M. Mohiuddin (1999). Raman studies of delta-doped semiconductors and quantum wells, J. Appl. Phys. 85, 1616 (1999).

        DOI:10.1063/1.369294 (IF=2.2)

 

  1. Qurban Memon and M. Mohiuddin, Education Exchange: From Institution to Intranets and Extranets, Proceedings of International Euro-Asian Conference on Information and Communication Technologies, Shiraz-Iran. October 29-31, 2002.http://ce.sharif.edu/~shafazand/WORk-english/pdf/113-28/education_exchange.pdf

 

  1. H. Yao, M. Mohiuddin, Y. C. Chang. Plasmon Raman studies of heavily doped In0.53Ga0.47As. 1997 March Meeting of the American Physical Society Kansas City MO, March 17-21 (1997). Bibliographic code: 1997APS.MAR.B1211Y

        http://flux.aps.org/meetings/YR97/BAPSMAR97/abs/S520.html

  1. Y. C. Chang, H. Yao, M. Mohiuddin, E.F. Schubert, and L. Pfeiffer. Raman spectra of delta-doped GaAs and heavily doped GaAs/AlxGa1-xAs multiple quantum wells. 1996 March Meeting of the American Physical Society Saint Louis MO, March 18-22 (1996).

                 http://flux.aps.org/meetings/YR9596/BAPSMAR96/tocN.html